Open AccessDielectrically Isolated High Voltage IC Using Complementary Gated MOS Thyristors
Author(s) -
S. Murakami
Publication year - 1989
Publication title -
ecs proceedings volumes
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2576-1579
pISSN - 0161-6374
DOI - 10.1149/198915.0288pv
Subject(s) - thyristor , antiparallel (mathematics) , materials science , optoelectronics , electrical engineering , integrated gate commutated thyristor , voltage , high voltage , electronic circuit , electrode , base (topology) , engineering , chemistry , physics , quantum mechanics , magnetic field , mathematical analysis , mathematics
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