Open AccessBidimensional Analysis of High Voltage RESURF LDMOS for Smart Power Integrated Circuits: On and Off State
Author(s) -
G. Charitat
Publication year - 1989
Publication title -
ecs proceedings volumes
Language(s) - English
Resource type - Journals
eISSN - 2576-1579
pISSN - 0161-6374
DOI - 10.1149/198915.0011pv
Subject(s) - ldmos , breakdown voltage , diode , power mosfet , power semiconductor device , avalanche breakdown , electrical engineering , voltage , high voltage , materials science , channel (broadcasting) , power (physics) , optoelectronics , computer science , engineering , mosfet , transistor , physics , quantum mechanics
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