Open AccessInfluence of Device Structure on the Transient and Steady State Characteristics of LIGT.
Author(s) -
S. Mukherjee
Publication year - 1987
Publication title -
ecs proceedings volumes
Language(s) - English
Resource type - Journals
eISSN - 2576-1579
pISSN - 0161-6374
DOI - 10.1149/198713.0310pv
Subject(s) - ldmos , transient (computer programming) , steady state (chemistry) , resistive touchscreen , electrical engineering , voltage , optoelectronics , materials science , computer science , engineering , breakdown voltage , chemistry , operating system
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