Open AccessInterface Resistance of an SOFC Cathode with a Pr1−xTbxO2−d Active Layer
Author(s) -
Reiichi Chiba,
Rin Kawaguchi,
Kazuma Horie
Publication year - 2022
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1945-7111/ac44b7
Subject(s) - cathode , materials science , active layer , layer (electronics) , electrolyte , analytical chemistry (journal) , fluorite , phase (matter) , chemistry , nanotechnology , electrode , metallurgy , organic chemistry , chromatography , thin film transistor
We investigated the use of Pr 1−x Tb x O 2−d (x = 0.0–1.0) as the active layer material in an SOFC cathode. Pr 1−x Tb x O 2−d (x = 0.0–1.0) was successfully synthesized in a single-phase fluorite structure consisting of a solid solution of Pr 6 O 11 and Tb 4 O 7 . When x was between 0.3 and 0.6, the phase transition between room temperature and 800 °C was eliminated. Coin cells with GDC electrolyte, a Pr 1−x Tb x O 2−d (x = 0.0–1.0) active layer and a LaNi 0.6 Fe 0.4 O 3 (LNF) current collecting layer were fabricated to clarify the effect of this active layer. The interface resistance of these cathodes was measured with an AC impedance method at 800 °C. The cathodes with a Pr 1−x Tb x O 2−d (all compositions) active layer performed better than a reference cathode with no active layer (simply an LNF layer).