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Magnetron sputtered nickel oxide thin films deposited on the native oxide of crystalline n-Si(100) wafers are studied in dependence of the substrate deposition temperature (600 °C, 400 °C, 200 °C, and room temperature) using X-ray and synchrotron excited photoemission spectroscopy as well as cyclic-voltammetry under illumination. We show that the substrate temperature during nickel oxide sputtering governs the composition of the pristine NiO x  film and the OER performance. Two dedicated nickel oxide species are found with Ni 2+  corresponding to stoichiometric NiO while Ni 3+  indicates an oxygen rich NiO x  (x &gt; 1) phase. With decreasing deposition temperature, the ratio of Ni 3+ /Ni 2+  in the pristine NiO x  film increases. Information depth dependent synchrotron related photoemission spectroscopy further suggests that oxygen rich NiO x  is found on top of the surface and at the grain boundaries. The OER onset potential improves from 1.55 V to 1.1 V in correlation to an increasing Ni 3+ /Ni 2+  ratio in the pristine NiO x  film and an increasing emission from a nickel oxyhydroxide phase (h-NiO x ) after photo-assisted cyclic-voltammetry in alkaline solution. Upon electrochemical treatment, a reconditioning process is observed with the formation of h-NiO x  that consists of Ni(OH) 2  and NiOOH, while NiO x  disappears.

journal of the electrochemical society

Sputtered Nickel Oxide Thin Films on n-Si(100)/SiO<sub>2</sub> Surfaces for Photo-Electrochemical Oxygen Evolution Reaction (OER): Impact of Deposition Temperature on OER Performance and on Composition before and after OER

Sputtered Nickel Oxide Thin Films on n-Si(100)/SiO2 Surfaces for Photo-Electrochemical Oxygen Evolution Reaction (OER): Impact of Deposition Temperature on OER Performance and on Composition before and after OER

Sputtered Nickel Oxide Thin Films on n-Si(100)/SiO₂ Surfaces for Photo-Electrochemical Oxygen Evolution Reaction (OER): Impact of Deposition Temperature on OER Performance and on Composition before and after OER