Open AccessElectrochemistry and Thermal Behavior of SiOx Made by Reactive Gas Milling
Author(s) -
Yidan Cao,
R. A. Dunlap,
M. N. Obrovac
Publication year - 2020
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/1945-7111/ab9e83
Subject(s) - materials science , amorphous solid , annealing (glass) , ball mill , chemical engineering , electrochemistry , oxygen , oxide , silicon , temperature cycling , thermal , metallurgy , electrode , chemistry , organic chemistry , physics , meteorology , engineering
SiO x with various oxygen contents were synthesized from Si powder by a simple room-temperature ball milling method by controlling the air exposure time during milling. The resulting SiO x consists of nano and amorphous Si dispersed in an amorphous silicon oxide matrix. The oxygen saturated composition of SiO 0.37 is thermally stable up to 800 °C and has improved cycling performance after annealing. The 1st irreversible capacity is reduced by high temperature annealing due to defect healing, while the high reversible capacity (1500–2000 mAh g −1 or 1600–1800 Ah l −1 ) is well maintained. This work demonstrates the thermal properties of SiO x made by reactive gas milling and how internal defects directly influence its electrochemistry.