Open AccessImproved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization
Author(s) -
Chien-Fong Lo,
Lu Liu,
Tsung-Sheng Kang,
Ryan Davies,
F. Ren,
S. J. Pearton,
Ivan I. Kravchenko,
Oleg Laboutin,
Yu Cao,
Wayne Johnson
Publication year - 2011
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/1.3629954
Subject(s) - materials science , transistor , optoelectronics , voltage , stress (linguistics) , threshold voltage , high electron mobility transistor , degradation (telecommunications) , schottky diode , schottky barrier , electrical engineering , diode , engineering , linguistics , philosophy
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