Open AccessKinetic Model of SiGe Selective Epitaxial Growth Using RPCVD Technique
Author(s) -
Mohammadreza Kolahdouz,
Luca Maresca,
Reza Ghandi,
Ali Khatibi,
Henry H. Radamson
Publication year - 2010
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/1.3487589
Subject(s) - dichlorosilane , epitaxy , materials science , kinetic energy , diffusion , electron mobility , doping , growth rate , surface diffusion , work (physics) , optoelectronics , layer (electronics) , mechanics , nanotechnology , silicon , thermodynamics , chemistry , adsorption , physics , classical mechanics , geometry , mathematics
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