Open AccessFormation of Si- and Ge-based Full-Heusler Alloy Thin Films using SOI and GOI Substrates for the Half-metallic Source and Drain of Spin Transistors
Author(s) -
Yota Takamura,
Akira Nishijima,
Yohei Nagahama,
Ryosho Nakane,
Satoshi Sugahara
Publication year - 2008
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/1.2986856
Subject(s) - materials science , silicon on insulator , alloy , optoelectronics , mosfet , thin film transistor , thin film , fabrication , transistor , silicon , germanium , layer (electronics) , nanotechnology , metallurgy , electrical engineering , voltage , medicine , alternative medicine , pathology , engineering
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