Si and SiGe Epitaxy in Perspective | Zendy

Wiebe B. de Boer | Zendy

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Si and SiGe Epitaxy in Perspective

Author(s) -

Wiebe B. de Boer

Publication year - 2008

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/1.2986749

Subject(s) - epitaxy , strengths and weaknesses , materials science , perspective (graphical) , engineering physics , semiconductor , semiconductor industry , optoelectronics , nanotechnology , engineering , computer science , psychology , manufacturing engineering , social psychology , layer (electronics) , artificial intelligence

Fifty years of Si and SiGe epitaxy in the semiconductor industry and twenty-five since the conception of the present generation of industrial epi reactors suffice to justify a review of the evolution and the status of the technology. Although there has been very little change in the reactor design, the epi process progressed significantly. The strengths and weaknesses of the current technology are discussed with an emphasis on possible improvements

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