Accurate SIMS Doping Profiling of Aluminum-Doped Solid-Phase Epitaxy Silicon Islands | Zendy

Yann Civale | Zendy; Lis K. Nanver | Zendy; S. Alberici | Zendy; Andrew Gammon | Zendy; I. Kelly | Zendy

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Accurate SIMS Doping Profiling of Aluminum-Doped Solid-Phase Epitaxy Silicon Islands

Author(s) -

Yann Civale,

Lis K. Nanver,

S. Alberici,

Andrew Gammon,

I. Kelly

Publication year - 2008

Publication title -

electrochemical and solid-state letters

Language(s) - English

Resource type - Journals

eISSN - 1944-8775

pISSN - 1099-0062

DOI - 10.1149/1.2836739

Subject(s) - doping , materials science , aluminium , epitaxy , secondary ion mass spectrometry , silicon , profiling (computer programming) , analytical chemistry (journal) , secondary ion mass spectroscopy , optoelectronics , mass spectrometry , nanotechnology , metallurgy , chemistry , environmental chemistry , layer (electronics) , computer science , operating system , chromatography

A procedure has been implemented for a quantitative aluminum-doping profiling of µm-scale aluminum-induced solid-phase-epitaxy (SPE) Si islands formed at 400°C. The aluminum concentration was measured to be 1–2×1019 cm?3, which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was measured by secondary-ion-mass-spectroscopy (SIMS) on arrays of SPE Si islands grown by a recently developed process that allows control of the island geometry

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