Aberration-corrected Scanning Transmission Electron Microscopy for Atomic-scale Characterization of Semiconductor Devices
Author(s) -
Klaus van Benthem,
Stephen J. Pennycook
Publication year - 2007
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/1.2779062
Subject(s) - scanning transmission electron microscopy , characterization (materials science) , semiconductor , scanning confocal electron microscopy , optics , dark field microscopy , electron tomography , conventional transmission electron microscope , materials science , energy filtered transmission electron microscopy , transmission electron microscopy , atomic units , semiconductor device , scanning electron microscope , electron , spherical aberration , microscopy , optoelectronics , physics , nanotechnology , layer (electronics) , quantum mechanics , lens (geology)
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