Open AccessGaN High Electron Mobility Transistor Degradation: Effect of RF Stress
Author(s) -
E Douglas,
F. Ren,
C. R. Abernathy,
S. J. Pearton
Publication year - 2013
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/05006.0261ecst
Subject(s) - cathodoluminescence , materials science , degradation (telecommunications) , optoelectronics , transistor , electroluminescence , high electron mobility transistor , schottky diode , stress (linguistics) , schottky barrier , electrical engineering , nanotechnology , diode , voltage , luminescence , linguistics , philosophy , layer (electronics) , engineering
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