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A survey of address translation technologies for flash memories
Author(s) -
Dongzhe Ma,
Jianhua Feng,
Guoliang Li
Publication year - 2014
Publication title -
acm computing surveys
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.079
H-Index - 163
eISSN - 1557-7341
pISSN - 0360-0300
DOI - 10.1145/2512961
Subject(s) - eeprom , computer science , flash memory , flash file system , flash memory emulator , flash (photography) , garbage collection , embedded system , power consumption , computer hardware , non volatile memory , non volatile random access memory , latency (audio) , operating system , computer memory , semiconductor memory , power (physics) , telecommunications , memory refresh , programming language , garbage , art , physics , quantum mechanics , visual arts
Flash is a type of Electronically Erasable Programmable Read-Only Memory (EEPROM). Different from traditional magnetic disks, flash memories have no moving parts and are purely electronic devices, giving them unique advantages, such as lower access latency, lower power consumption, higher density, shock resistance, and lack of noise. However, existing applications cannot run directly on flash memories due to their special characteristics. Flash Translation Layer (FTL) is a software layer built on raw flash memories that emulates a normal block device like magnetic disks. Primary functionalities of the FTL include address translation, garbage collection, and wear leveling. This survey focuses on address translation technologies and provides a broad overview of existing schemes described in patents, journals, and conference proceedings.

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