Open AccessSurface Evolution of GaP Grown on Si Substrates Using Metalorganic Vapor Phase Epitaxy
Author(s) -
Yasushi Takano,
Tatsuya Takagi,
Y Matsuo,
Shunro Fuke
Publication year - 2010
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.1143/jjap.49.035502
Subject(s) - apds , epitaxy , materials science , layer (electronics) , chemical vapor deposition , optoelectronics , vapor phase , annihilation , metalorganic vapour phase epitaxy , deposition (geology) , phase (matter) , positron annihilation , analytical chemistry (journal) , avalanche photodiode , optics , nanotechnology , chemistry , positron , geology , thermodynamics , physics , detector , paleontology , quantum mechanics , chromatography , electron , organic chemistry , sediment
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