Open AccessHigh-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
Author(s) -
Yasushi Takano,
Kenta Morizumi,
Satoshi Watanabe,
Hiroyuki Masuda,
Takuya Okamoto,
Kunihiro Noda,
Shinya Fukuda,
Tomokazu Ozeki,
Kazuhiro Kuwahara,
Shunro Fuke,
Yuzo Furukawa,
H. Yonezu
Publication year - 2009
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.1143/jjap.48.011102
Subject(s) - metalorganic vapour phase epitaxy , epitaxy , coalescence (physics) , transmission electron microscopy , materials science , nucleation , vapor phase , stacking , layer (electronics) , band gap , optoelectronics , crystallography , analytical chemistry (journal) , chemistry , nanotechnology , physics , organic chemistry , chromatography , astrobiology , thermodynamics
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