Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors
Author(s) -
Daniel Moraru,
Maciej Ligowski,
Kiyohito Yokoi,
Takeshi Mizuno,
Michiharu Tabe
Publication year - 2009
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.1143/apex.2.071201
Subject(s) - turnstile , nanowire , transistor , materials science , dopant , doping , field effect transistor , optoelectronics , silicon , silicon on insulator , electron , substrate (aquarium) , quantum dot , coulomb blockade , coupling (piping) , nanotechnology , voltage , physics , computer science , quantum mechanics , metallurgy , programming language , geology , oceanography
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