Open AccessEffects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors
Author(s) -
Katarína Sedlačková,
Б. Затько,
Márius Pavlovič,
Andrea Šagátová,
Vladimı́r Nečas
Publication year - 2020
Publication title -
international journal of modern physics. conference series
Language(s) - English
Resource type - Journals
ISSN - 2010-1945
DOI - 10.1142/s2010194520600174
Subject(s) - irradiation , schottky barrier , schottky diode , materials science , electron , detector , anode , analytical chemistry (journal) , radiation , optoelectronics , cathode , spectral line , radiation hardening , leakage (economics) , electrode , chemistry , optics , physics , diode , nuclear physics , economics , macroeconomics , chromatography , astronomy
High detection efficiency and good room temperature performance of Schottky barrier CdTe semiconductor detectors make them well suited especially for X-ray and gamma-ray detectors. In this contribution, we studied the effect of electron irradiation on the spectrometric performance of the Schottky barrier CdTe detectors manufactured from the chips of size [Formula: see text] mm 3 with In/Ti anode and Pt cathode electrodes (Acrorad Co., Ltd.). Electron irradiation of the detectors was performed by 5 MeV electrons at RT using a linear accelerator UELR 5-1S. Different accumulated doses from 0.5 kGy up to 1.25 kGy were applied and the consequent degradation of the spectrometric properties was evaluated by measuring the pulse-height gamma-spectra of [Formula: see text] radioisotope source. The spectra were collected at different reverse voltages from 300 V up to 500 V. The changes of selected significant parameters, like energy resolution, peak position, detection efficiency and leakage current were monitored and evaluated to quantify the radiation hardness of the studied detectors. The results showed remarkable worsening of their spectrometric parameters even at relatively low applied doses of 1.25 kGy.