Open AccessOptimizing VO2 film properties for use in SAW devices
Author(s) -
M. E. Kutepov,
G. Ya. Karapetyan,
I. V. Lisnevskaya,
К. Г. Абдулвахидов,
A. A. Kozmin,
Е. М. Кайдашев
Publication year - 2021
Publication title -
journal of advanced dielectrics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.38
H-Index - 13
eISSN - 2010-135X
pISSN - 2010-1368
DOI - 10.1142/s2010135x21600122
Subject(s) - materials science , sapphire , pulsed laser deposition , thin film , hysteresis , metal–insulator transition , phase transition , atmospheric temperature range , insulator (electricity) , transition temperature , thermal hysteresis , resistive touchscreen , analytical chemistry (journal) , metal , condensed matter physics , optoelectronics , nanotechnology , superconductivity , laser , optics , thermodynamics , electrical engineering , metallurgy , chemistry , physics , engineering , chromatography
The aim of this study is to optimize the conditions for producing thin VO 2 films for their use in SAW devices. We used the pulsed laser deposition (PLD) method to produce VO 2 films. We used a metallic vanadium target. The dependence of the oxygen pressure during PLD on the resistive metal–insulator transition (MIT) on substrates of [Formula: see text]-sapphire and LiNbO 3 YX/128[Formula: see text] was studied. The resulting films had sharp metal–insulator temperature transitions on [Formula: see text]-Al 2 O 3 . The most high-quality films showed resistance change by four orders of magnitude. At the lower point of the hysteresis, the resistance of these samples was in the range of 50–100 [Formula: see text]. The synthesized VO 2 films had a sharp temperature transition and a relatively small width of thermal hysteresis. The SAW damping during its passage through a VO 2 /ZnO/LiNbO 3 YX/128[Formula: see text] film at the metal–insulator phase transition temperature was studied. Attenuation SAW decreases with increasing temperature from 52 dB/cm to 0 dB/cm.