Open AccessDielectric properties of amorphous Bi–Ti–O thin films
Author(s) -
Rujie Sun,
Wei Xu,
R. B. van Dover
Publication year - 2021
Publication title -
journal of advanced dielectrics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.38
H-Index - 13
eISSN - 2010-135X
pISSN - 2010-1368
DOI - 10.1142/s2010135x21500090
Subject(s) - amorphous solid , dielectric , materials science , thin film , dissipation factor , sputter deposition , sputtering , condensed matter physics , analytical chemistry (journal) , nanotechnology , optoelectronics , physics , crystallography , chemistry , chromatography
We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering. In the composition range of 0.5 < [Formula: see text] < 0.7, amorphous [Formula: see text][Formula: see text][Formula: see text] exhibits excellent dielectric properties, with a high dielectric constant, [Formula: see text] [Formula: see text] 53, and a dissipation factor as low as tan [Formula: see text] = 0.007. The corresponding maximum breakdown field reaches [Formula: see text]1.6 MV/cm, yielding a maximum stored charge per unit area of up to 8 [Formula: see text]C/cm 2 . This work demonstrates the potential of amorphous Bi–Ti–O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits.