Open AccessUltralow switching voltage and power consumption of GeS2 thin film resistive switching memory
Author(s) -
Nikolay Lyapunov,
Chun Hung Suen,
Chi Man Wong,
Xiaodan Tang,
Zeuku Ho,
Kai Zhou,
X. X. Chen,
H. M. Liu,
Xiaoyuan Zhou,
Jiyan Dai
Publication year - 2021
Publication title -
journal of advanced dielectrics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.38
H-Index - 13
eISSN - 2010-135X
pISSN - 2010-1368
DOI - 10.1142/s2010135x21500041
Subject(s) - resistive random access memory , materials science , optoelectronics , neuromorphic engineering , voltage , electrode , thin film , amorphous solid , non volatile memory , power consumption , layer (electronics) , nanotechnology , computer data storage , power (physics) , electrical engineering , computer science , computer hardware , physics , engineering , artificial neural network , quantum mechanics , chemistry , organic chemistry , machine learning
The coming Big Data Era requires progress in storage and computing technologies. As an emerging memory technology, Resistive RAM (RRAM) has shown its potential in the next generation high-density storage and neuromorphic computing applications, which extremely demand low switching voltage and power consumption. In this work, a 10 nm-thick amorphous GeS 2 thin film was utilized as the functional layer of RRAM in a combination with Ag and Pt electrodes. The structure and memory performance of the GeS 2 -based RRAM device was characterized — it presents high on/off ratio, fast switching time, ultralow switching voltage (0.15 V) and power consumption (1.0 pJ and 0.56 pJ for PROGRAM and ERASE operations, respectively). We attribute these competitive memory characteristics to Ag doping phenomena and subsequent formation of Ag nano-islands in the functional layer that occurs due to diffusion of Ag from electrode into the GeS 2 thin film. These properties enable applications of GeS 2 for low energy RRAM device.