Open AccessVapor transport deposition of Sb2Se3 thin films for photodetector application
Author(s) -
Shipeng Wen,
Xingtian Yin,
Haixia Xie,
Yuxiao Guo,
Jie Liu,
Dan Liŭ,
Wenxiu Que,
Huan Liu,
Weiguo Liu
Publication year - 2020
Publication title -
journal of advanced dielectrics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.38
H-Index - 13
eISSN - 2010-135X
pISSN - 2010-1368
DOI - 10.1142/s2010135x20500162
Subject(s) - materials science , responsivity , thin film , photodetector , deposition (geology) , antimony , selenide , substrate (aquarium) , optoelectronics , chemical vapor deposition , layer (electronics) , nanotechnology , selenium , metallurgy , paleontology , oceanography , sediment , geology , biology
Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb 2 Se 3 films on substrates. The influence of deposition temperature, distance between the Sb 2 Se 3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb 2 Se 3 thin film is employed to fabricate photodetector with a structure of ITO/SnO 2 /Sb 2 Se 3 /Au, where the spin-coated SnO 2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300–1000[Formula: see text]nm with a maximum value of 312[Formula: see text]mA W[Formula: see text] at 750[Formula: see text]nm.