Open AccessTrap modification and mechanoluminescence improvement by Si substitution for Sn in Sr2SnO4:Sm3+ ceramics
Author(s) -
Hua Fang,
Gaojian Qiu,
Xusheng Wang,
Yanxia Li,
Xi Yao
Publication year - 2018
Publication title -
journal of advanced dielectrics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.38
H-Index - 13
eISSN - 2010-135X
pISSN - 2010-1368
DOI - 10.1142/s2010135x18500169
Subject(s) - physics , energy (signal processing) , mechanoluminescence , afterglow , combinatorics , crystallography , analytical chemistry (journal) , phosphor , quantum mechanics , mathematics , chemistry , optoelectronics , chromatography , gamma ray burst
A series of Sr[Formula: see text]Sn[Formula: see text]Si x O 4 :0.04Sm[Formula: see text] ([Formula: see text], 0.1, 0.15, 0.2, 0.3, 0.4) were synthesized from solid-state reaction. The mechanoluminescence (ML) performance of Sr[Formula: see text]SnO 4 :0.04Sm[Formula: see text] was greatly enhanced by partial Si[Formula: see text] substitution for Sn[Formula: see text], and the sample of Sr[Formula: see text]Sn[Formula: see text]Si[Formula: see text]O 4 :0.04Sm[Formula: see text] showed weaker afterglow and twice stronger ML intensity than that in Sr[Formula: see text] SnO 4 :0.04Sm[Formula: see text]. The stress response of Sr[Formula: see text]Sn[Formula: see text]Si[Formula: see text]O 4 :0.04Sm[Formula: see text] ranged from 250 to 1200 N, and its linearity was greatly restored. Particularly, it was very sensitive in the minimal stress response range. These properties of no load threshold for stress sensing and weak afterglow make Sr[Formula: see text]Sn[Formula: see text]Si[Formula: see text]O 4 :0.04Sm[Formula: see text] superior to other excellent ML materials. The introduction of Si[Formula: see text] caused lattice distortion and promoted defect formation in the system. The trap level energy greatly increased and the trap depth changed, which enhanced the trap ability and therefore improved effectively the ML properties.