Open AccessPolarized Raman scattering study of PSN single crystals and epitaxial thin films
Author(s) -
Jiřı́ Pokorný,
I. Rafalovskyi,
I. Gregora,
Fedir Borodavka,
M. Savinov,
Jan Drahokoupil,
M. Tyunina,
T. Kocourek,
M. Jelínek,
Yonghong Bing,
ZuoGuang Ye,
J. Hlinka
Publication year - 2015
Publication title -
journal of advanced dielectrics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.38
H-Index - 13
eISSN - 2010-135X
pISSN - 2010-1368
DOI - 10.1142/s2010135x15500137
Subject(s) - materials science , raman scattering , epitaxy , ferroelectricity , scattering , polarization (electrochemistry) , dielectric , raman spectroscopy , thin film , condensed matter physics , optics , optoelectronics , nanotechnology , layer (electronics) , chemistry , physics
This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc 0.5 Nb 0.5 O 3 (PSN) single crystals and epitaxially compressed thin films grown on (100)-oriented MgO substrates. It is found that there are significant differences between the properties of the crystals and films, and that these differences can be attributed to the anticipated structural differences between these two forms of the same material. In particular, the scattering characteristics of the oxygen octahedra breathing mode near 810 cm -1 indicate a ferroelectric state for the crystals and a relaxor state for the films, which is consistent with the dielectric behaviors of these materials.