Open AccessCrystal growth and property characterization for PIN–PMN–PT ternary piezoelectric crystals
Author(s) -
Jian Tian,
Pengdi Han
Publication year - 2014
Publication title -
journal of advanced dielectrics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.38
H-Index - 13
eISSN - 2010-135X
pISSN - 2010-1368
DOI - 10.1142/s2010135x13500276
Subject(s) - materials science , piezoelectricity , ternary operation , dielectric , coercivity , crystal (programming language) , crystal growth , dielectric loss , composite material , crystallography , optoelectronics , condensed matter physics , chemistry , physics , computer science , programming language
Binary piezoelectric crystal Pb ( Mg 1/3 Nb 2/3 ) O 3 – PbTiO 3 (PMN–PT) has excellent dielectric and piezoelectric properties, which has led to the commercialization for medical ultrasound imaging. Recently, there is a growing demand for piezoelectric crystals with improved thermal and electrical properties. Ternary piezoelectric crystals Pb ( In 1/2 Nb 1/2 ) O 3 – Pb ( Mg 1/3 Nb 2/3 ) O 3 – PbTiO 3 (PIN–PMN–PT) have increased depoling temperature and coercive field than binary PMN–PT. To better understand the ternary crystal system and improve crystal properties, we systematically investigated crystal growth of PIN–PMN–PT with modified Bridgman method. Like PMN–PT, PIN–PMN–PT crystals have excellent piezoelectric properties (e.g., k 33 ~ 0.87–0.92, d 33 ~ 1000–2200 pm/V ). Higher PIN content leads to ~40°C increase in depoling temperature and more than doubling of coercive field(~7.0 kV/cm). Such improvements are advantageous for applications where high temperature and/or high-drive are needed.