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Depositions of In2xGa2−2xO3-based films and their application in the fabrication of a thin-film transistor
Author(s) -
Chun-Ming Huang,
Mau–Phon Houng,
Sufen Wei,
ChengFu Yang
Publication year - 2021
Publication title -
modern physics letters b
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.293
H-Index - 44
eISSN - 1793-6640
pISSN - 0217-9849
DOI - 10.1142/s0217984921410116
Subject(s) - materials science , thin film transistor , transmittance , fabrication , electrical resistivity and conductivity , sputtering , thin film , measure (data warehouse) , analytical chemistry (journal) , optoelectronics , physics , nanotechnology , chemistry , quantum mechanics , computer science , layer (electronics) , medicine , alternative medicine , pathology , database , chromatography
Compositions of [Formula: see text] and [Formula: see text] were mixed and sintered at 1250[Formula: see text]C to fabricate [Formula: see text] and [Formula: see text] targets, and RF sputtering method was used to deposit [Formula: see text] and [Formula: see text] films by introducing pure Argon during the deposition process. After [Formula: see text] and [Formula: see text] films were deposited, we used the X-ray diffraction pattern to analyze their crystalline properties, the ultraviolet–visible-infrared spectrophotometry to measure their transmittance spectra in the wavelength range of 200–800 nm, an X-ray photoelectron spectroscopy to find their composition variation, and a Hall equipment to measure their electrical properties, including the carrier concentration, the mobility, and the resistivity. We found that the absorption edges of [Formula: see text] films were shifted to higher wavelength as [Formula: see text] value increased from 0.2 to 0.4. We also found that the Hall parameters of [Formula: see text] film could not be measured because of its high resistivity. Therefore, [Formula: see text] film was used to fabricate thin-film transistor (TFT), and the electrical properties of the fabricated TFT were also well investigated.

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