High- k perovskite gate oxide for modulation beyond 10 14 cm −2
Author(s) -
Dowon Song,
Myoungho Jeong,
Juhan Kim,
Bongju Kim,
Jae Ha Kim,
Jae Hoon Kim,
Kiyoung Lee,
Yongsung Kim,
K. Char
Publication year - 2022
Publication title -
science advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 5.928
H-Index - 146
ISSN - 2375-2548
DOI - 10.1126/sciadv.abm3962
Subject(s) - materials science , dielectric , high κ dielectric , ferroelectricity , field effect transistor , leakage (economics) , optoelectronics , gate dielectric , transistor , analytical chemistry (journal) , electrical engineering , voltage , chemistry , chromatography , economics , macroeconomics , engineering
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