z-logo
open-access-imgOpen Access
High- k perovskite gate oxide for modulation beyond 10 14 cm −2
Author(s) -
Dowon Song,
Myoungho Jeong,
Juhan Kim,
Bongju Kim,
Jae Ha Kim,
Jae Hoon Kim,
Kiyoung Lee,
Yongsung Kim,
K. Char
Publication year - 2022
Publication title -
science advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 5.928
H-Index - 146
ISSN - 2375-2548
DOI - 10.1126/sciadv.abm3962
Subject(s) - materials science , dielectric , high κ dielectric , ferroelectricity , field effect transistor , leakage (economics) , optoelectronics , gate dielectric , transistor , analytical chemistry (journal) , electrical engineering , voltage , chemistry , chromatography , economics , macroeconomics , engineering

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom