Open AccessIon sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors
Author(s) -
Qitao Hu,
Si Chen,
P. M. Solomon,
Zhen Zhang
Publication year - 2021
Publication title -
science advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.928
H-Index - 146
ISSN - 2375-2548
DOI - 10.1126/sciadv.abj6711
Subject(s) - materials science , optoelectronics , nanowire , transistor , silicon , field effect transistor , ion , coulomb blockade , semiconductor , nanotechnology , voltage , chemistry , physics , organic chemistry , quantum mechanics
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