Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention | Zendy

Yuting Zhang | Zendy; Swapnadeep Poddar | Zendy; He Huang | Zendy; Leilei Gu | Zendy; Qianpeng Zhang | Zendy; Yu Zhou | Zendy; Shuai Yan | Zendy; Sifan Zhang | Zendy; Zhitang Song | Zendy; Baoling Huang | Zendy; Guozhen Shen | Zendy; Zhiyong Fan | Zendy

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Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention

Author(s) -

Yuting Zhang,

Swapnadeep Poddar,

He Huang,

Leilei Gu,

Qianpeng Zhang,

Yu Zhou,

Shuai Yan,

Sifan Zhang,

Zhitang Song,

Baoling Huang,

Guozhen Shen,

Zhiyong Fan

Publication year - 2021

Publication title -

science advances

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 5.928

H-Index - 146

ISSN - 2375-2548

DOI - 10.1126/sciadv.abg3788

Subject(s) - materials science , retention time , switching time , optoelectronics , nanowire , non volatile memory , crystallite , nanotechnology , resistive touchscreen , perovskite (structure) , halide , data retention , electrical engineering , chemistry , crystallography , inorganic chemistry , chromatography , metallurgy , engineering

Stable high-density perovskite nanowire array Re-RAMs report unprecedented long retention time and fast switching speed.

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