Open AccessRemote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
Author(s) -
Junseok Jeong,
Qingxiao Wang,
Janghwan Cha,
Dae Kwon Jin,
Dong Hoon Shin,
Sunah Kwon,
Bong Kyun Kang,
Jun Hyuk Jang,
Woo Seok Yang,
Yong Seok Choi,
Jinkyoung Yoo,
Jong Kyu Kim,
ChulHo Lee,
Sang Wook Lee,
Anvar Zakhidov,
Suklyun Hong,
Moon J. Kim,
Young Joon Hong
Publication year - 2020
Publication title -
science advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.928
H-Index - 146
ISSN - 2375-2548
DOI - 10.1126/sciadv.aaz5180
Subject(s) - wafer , heterojunction , optoelectronics , light emitting diode , materials science , diode , indium gallium nitride , gallium nitride , nanotechnology , layer (electronics)
Remote epitaxy enables to fabricate flexible GaN micro-LED sticker releasable from wafer.
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