Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed | Zendy

Pierre Noé | Zendy; Anthonin Verdy | Zendy; F. D’Acapito | Zendy; JeanBaptiste Dory | Zendy; M. Bernard | Zendy; G. Navarro | Zendy; JeanBaptiste Jager | Zendy; J. Gaudin | Zendy; JeanYves Raty | Zendy

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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Author(s) -

Pierre Noé,

Anthonin Verdy,

F. D’Acapito,

JeanBaptiste Dory,

M. Bernard,

G. Navarro,

JeanBaptiste Jager,

J. Gaudin,

JeanYves Raty

Publication year - 2020

Publication title -

science advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.928

H-Index - 146

ISSN - 2375-2548

DOI - 10.1126/sciadv.aay2830

Subject(s) - chalcogenide , neuromorphic engineering , non volatile memory , metastability , materials science , amorphous solid , mechanism (biology) , nanotechnology , optoelectronics , electronic circuit , computer science , electric field , electrical engineering , chemistry , artificial neural network , physics , quantum mechanics , organic chemistry , machine learning , engineering

We reveal the microscopic origin of the ovonic threshold switching mechanism.

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