Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs | Zendy

Gerald J. Brady | Zendy; Austin J. Way | Zendy; Nathaniel S. Safron | Zendy; Harold Evensen | Zendy; Padma Gopalan | Zendy; Michael S. Arnold | Zendy

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Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

Author(s) -

Gerald J. Brady,

Austin J. Way,

Nathaniel S. Safron,

Harold Evensen,

Padma Gopalan,

Michael S. Arnold

Publication year - 2016

Publication title -

science advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.928

H-Index - 146

ISSN - 2375-2548

DOI - 10.1126/sciadv.1601240

Subject(s) - carbon nanotube , materials science , ballistic conduction , optoelectronics , transistor , current density , nanotechnology , conductance , carbon nanotube field effect transistor , semiconductor , ballistic conduction in single walled carbon nanotubes , field effect transistor , quantum tunnelling , electrical conductor , nanotube , voltage , condensed matter physics , composite material , electrical engineering , optical properties of carbon nanotubes , electron , physics , engineering , quantum mechanics

Nearly ballistic carbon nanotube array transistors are realized with current densities outmatching conventional semiconductors.

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