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Behavior of p – n junction silicon radiation detectors in a temperature‐compensated direct‐current circuit
Author(s) -
Klevenhagen S. C.
Publication year - 1978
Publication title -
medical physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.473
H-Index - 180
eISSN - 2473-4209
pISSN - 0094-2405
DOI - 10.1118/1.594394
Subject(s) - detector , compensation (psychology) , silicon , materials science , optoelectronics , current (fluid) , radiation , temperature measurement , direct current , junction temperature , atmospheric temperature range , particle detector , thermal , operating temperature , optics , physics , electrical engineering , voltage , engineering , psychology , quantum mechanics , meteorology , psychoanalysis
The behavior of silicon p – n junction radiation detectors used in the direct‐current short‐circuit mode without bias was examined under such load resistance which ensures operation in a temperature‐compensated state. The objective was twofold; to check whether the compensation is achieved and to investigate the extent of compensation shown at temperatures other than that initially selected as the operation point. It was found that the detector performance in various thermal conditions can be predicted from a knowledge of the behavior of the individual detector and circuit parameters and that it is possible to stabilize the detector response within ±2% over a relatively wide temperature range: 18°–40°C. However, in the case of devices which show thermal currents of large temperature sensitivity, compensation at small and at large dose rates needs to be considered separately.