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Spatiotemporal Monte Carlo transport methods in x‐ray semiconductor detectors: Application to pulse‐height spectroscopy in a‐Se
Author(s) -
Fang Yuan,
Badal Andreu,
Allec Nicholas,
Karim Karim S.,
Badano Aldo
Publication year - 2012
Publication title -
medical physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.473
H-Index - 180
eISSN - 2473-4209
pISSN - 0094-2405
DOI - 10.1118/1.3669486
Subject(s) - monte carlo method , physics , semiconductor detector , electron , scattering , detector , charge carrier , optics , computational physics , condensed matter physics , nuclear physics , statistics , mathematics
Purpose: The authors describe a detailed Monte Carlo (MC) method for the coupled transport of ionizing particles and charge carriers in amorphous selenium (a‐Se) semiconductor x‐ray detectors, and model the effect of statistical variations on the detected signal. Methods: A detailed transport code was developed for modeling the signal formation process in semiconductor x‐ray detectors. The charge transport routines include three‐dimensional spatial and temporal models of electron‐hole pair transport taking into account recombination and trapping. Many electron‐hole pairs are created simultaneously in bursts from energy deposition events. Carrier transport processes include drift due to external field and Coulombic interactions, and diffusion due to Brownian motion. Results: Pulse‐height spectra (PHS) have been simulated with different transport conditions for a range of monoenergetic incident x‐ray energies and mammography radiation beam qualities. Two methods for calculating Swank factors from simulated PHS are shown, one using the entire PHS distribution, and the other using the photopeak. The latter ignores contributions from Compton scattering and K‐fluorescence. Comparisons differ by approximately 2% between experimental measurements and simulations. Conclusions: The a‐Se x‐ray detector PHS responses simulated in this work include three‐dimensional spatial and temporal transport of electron‐hole pairs. These PHS were used to calculate the Swank factor and compare it with experimental measurements. The Swank factor was shown to be a function of x‐ray energy and applied electric field. Trapping and recombination models are all shown to affect the Swank factor.