Efficient simulation of EUV multilayer defects with rigorous data base approach | Zendy

Peter Evanschitzky | Zendy; Feng Shao | Zendy; Andreas Erdmann | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Efficient simulation of EUV multilayer defects with rigorous data base approach

Author(s) -

Peter Evanschitzky,

Feng Shao,

Andreas Erdmann

Publication year - 2012

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.964282

Subject(s) - extreme ultraviolet lithography , extreme ultraviolet , computation , solver , computer science , base (topology) , range (aeronautics) , field (mathematics) , computational science , electronic engineering , optics , physics , algorithm , aerospace engineering , engineering , mathematical analysis , laser , mathematics , pure mathematics , programming language

This paper presents the extension of the well-established rigorous electromagnetic field (EMF) solver Waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects using a rigorously computed multilayer defect data base combined with on demand computed absorber structures. Typical computation times are in the range of seconds up to a few minutes. The new simulation approach will be presented. Selected simulation examples and a defect repair example demonstrate the functionality and the capability to perform fast, highly accurate and flexible EUV multilayer defect computations

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research