Open AccessInfluence of point defects on the performance of InVO 4 photoanodes
Author(s) -
Roel van de Krol,
Julie Ségalini,
Cristina S. Enache
Publication year - 2010
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.860463
Subject(s) - photoluminescence , absorption (acoustics) , materials science , conduction band , band gap , visible spectrum , optoelectronics , thin film , metal , chemical engineering , photochemistry , nanotechnology , chemistry , composite material , metallurgy , physics , quantum mechanics , electron , engineering
The properties of thin film InVO4 photoanodes for water splitting have been studied. Compact films of InVO4 were prepared by spray pyrolysis and are found to be stable between pH 3 – 11. Although the indirect bandgap is 3.2 eV, a modest amount of visible light absorption is observed. The origin of this absorption is attributed to the presence of deep donor states at ~0.7 eV below the conduction band. Shallow donors are absent in this material, in contrast to what is normally observed for metal oxides. The deep donor model explains the much stronger visible light absorption of powders compared to thin films, and is supported by photoluminescence data. The origin of the deep donors is attributed to deviations in the In:V ratio, and the corresponding defect-chemical reactions will be discussed.ChemE/Chemical EngineeringApplied Science
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