A new single-photon avalanche diode in 90nm standard CMOS technology | Zendy

Mohammad Azim Karami | Zendy; Marek Gersbach | Zendy; Edoardo Charbon | Zendy

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A new single-photon avalanche diode in 90nm standard CMOS technology

Author(s) -

Mohammad Azim Karami,

Marek Gersbach,

Edoardo Charbon

Publication year - 2010

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.859435

Subject(s) - single photon avalanche diode , avalanche diode , jitter , optoelectronics , cmos , materials science , avalanche photodiode , optics , detector , miniaturization , microscopy , photon counting , diode , physics , voltage , breakdown voltage , computer science , telecommunications , nanotechnology , quantum mechanics

A single-photon avalanche diode (SPAD) fabricated in a 90nm standard CMOS process is reported. The detector comprises an octagonal multiplication region and a guard ring to prevent premature edge breakdown using exclusively standard layers. The proposed structure is the result of a systematic study aimed at miniaturization, while optimizing overall performance. The device exhibits a dark count rate of 16 kHz at room temperature, a maximum photon detection probability of 16% and the jitter of 398ps at a wavelength of 637nm. Applications include time-of-flight 3D vision, fluorescence lifetime imaging microscopy, fluorescence correlation spectroscopy, and time-resolved gamma/X-ray imaging. Standard characterization of the SPAD was performed in different bias voltages and temperatures

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