Open AccessComparison of nBn and nBp mid-wave barrier infrared photodetectors
Author(s) -
John F. Klem,
Jungkwun Kim,
M. J. Cich,
Samuel D. Hawkins,
Torben R. Fortune,
Jeffrey L. Rienstra
Publication year - 2010
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.842772
Subject(s) - photocurrent , responsivity , photodetector , dark current , optoelectronics , materials science , depletion region , biasing , capacitance , barrier layer , schottky barrier , voltage , photoconductivity , layer (electronics) , semiconductor , physics , nanotechnology , electrode , quantum mechanics , diode
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