Open Access<title>Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation</title>
Author(s) -
O. G. Zhevnyak
Publication year - 2008
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.802534
Subject(s) - monte carlo method , mosfet , electron mobility , electron , drift velocity , saturation velocity , physics , channel (broadcasting) , electric field , condensed matter physics , materials science , computational physics , transistor , electrical engineering , voltage , nuclear physics , quantum mechanics , statistics , mathematics , engineering
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