Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells
Author(s) -
Rinat Yapparov,
Yi Chao Chow,
Cheyenne Lynsky,
Feng Wu,
Shuji Nakamura,
James S. Speck,
S. Marcinkevičius
Publication year - 2022
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.1117/12.2608741
Subject(s) - quantum well , spontaneous emission , recombination , carrier lifetime , materials science , quantum efficiency , optoelectronics , polar , spectroscopy , non radiative recombination , wide bandgap semiconductor , photoluminescence , optics , physics , semiconductor , chemistry , semiconductor materials , silicon , laser , biochemistry , quantum mechanics , gene , astronomy
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