Open AccessInvestigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices
Author(s) -
Isaac Stricklin,
Morteza Monavarian,
Andrew Aragon,
Greg Pickrell,
Mary H. Crawford,
Andrew A. Allerman,
Andrew Armstrong,
Daniel Feezell
Publication year - 2018
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.1117/12.2322005
Subject(s) - metalorganic vapour phase epitaxy , impurity , materials science , wafer , analytical chemistry (journal) , secondary ion mass spectrometry , silicon , wide bandgap semiconductor , optoelectronics , chemical vapor deposition , gallium nitride , nanotechnology , ion , chemistry , epitaxy , organic chemistry , layer (electronics) , chromatography
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