Open AccessTHz photomixer with a 40nm-wide nanoelectrode gap on low-temperature grown GaAs
Author(s) -
Gediminas Seniutinas,
Gediminas Gervinskas,
E. Constable,
A. Krotkus,
G. Molis,
Gintaras Valušis,
R. A. Lewis,
Saulius Juodkazis
Publication year - 2013
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.2033746
Subject(s) - terahertz radiation , materials science , optoelectronics , common emitter , electron beam lithography , antenna (radio) , focused ion beam , lithography , gallium arsenide , nanotechnology , resist , ion , electrical engineering , chemistry , layer (electronics) , engineering , organic chemistry
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