Open AccessEpitaxially passivated mesa-isolated InGaAs photodetectors
Author(s) -
John F. Klem,
Jin K. Kim,
Michael Joseph Cich,
Samuel D. Hawkins,
Darin Leonhardt,
Torben R. Fortune,
Wesley Thomas Coon
Publication year - 2013
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - Uncategorized
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.2016558
Subject(s) - dark current , responsivity , photodetector , optoelectronics , materials science , passivation , biasing , gallium arsenide , photodiode , epitaxy , diffusion , detector , layer (electronics) , optics , voltage , physics , nanotechnology , quantum mechanics , thermodynamics
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