Open AccessUnderstanding the influence of three-dimensional sidewall roughness on observed line-edge roughness in scanning electron microscopy images
Author(s) -
Luc van Kessel,
T. J. Huisman,
K. HAGEN
Publication year - 2020
Publication title -
journal of micro/nanolithography mems and moems
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.394
H-Index - 42
eISSN - 1932-5134
pISSN - 1932-5150
DOI - 10.1117/1.jmm.19.3.034002
Subject(s) - surface finish , scanning electron microscope , optics , trench , materials science , enhanced data rates for gsm evolution , monte carlo method , wafer , line (geometry) , projection (relational algebra) , surface roughness , scattering , geometry , physics , mathematics , optoelectronics , composite material , computer science , algorithm , statistics , telecommunications , layer (electronics)
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