Open AccessDelta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
Author(s) -
Marko J. Tadjer,
Kohei Sasaki,
Daiki Wakimoto,
Travis J. Anderson,
Michael A. Mastro,
James C. Gallagher,
Alan G. Jacobs,
A. Mock,
Andrew D. Koehler,
Mona Ebrish,
Karl D. Hobart,
Akito Kuramata
Publication year - 2021
Publication title -
journal of vacuum science and technology. a. vacuum, surfaces, and films
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/6.0000932
Subject(s) - heterojunction , transconductance , molecular beam epitaxy , materials science , analytical chemistry (journal) , optoelectronics , field effect transistor , doping , dopant , molecular beam , transistor , epitaxy , chemistry , voltage , layer (electronics) , nanotechnology , electrical engineering , organic chemistry , chromatography , engineering , molecule