Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N2/H2 plasma | Zendy

Deepa Shukla | Zendy; Adnan Mohammad | Zendy; Saidjafarzoda Ilhom | Zendy; Brian G. Willis | Zendy; Ali K. Okyay | Zendy; Necmi Bıyıklı | Zendy

Open Access

Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N2/H2 plasma

Author(s) -

Deepa Shukla,

Adnan Mohammad,

Saidjafarzoda Ilhom,

Brian G. Willis,

Ali K. Okyay,

Necmi Bıyıklı

Publication year - 2021

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.583

H-Index - 112

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/6.0000706

Subject(s) - trimethylgallium , materials science , analytical chemistry (journal) , thin film , chemical vapor deposition , gallium nitride , gallium , atomic layer deposition , ellipsometry , crystallite , plasma , remote plasma , trimethylindium , crystallization , substrate (aquarium) , metalorganic vapour phase epitaxy , layer (electronics) , epitaxy , chemistry , optoelectronics , nanotechnology , physics , organic chemistry , chromatography , quantum mechanics , metallurgy , oceanography , geology

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