Open AccessReal-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N2/H2 plasma
Author(s) -
Deepa Shukla,
Adnan Mohammad,
Saidjafarzoda Ilhom,
Brian G. Willis,
Ali Kemal Okyay,
Necmi Bıyıklı
Publication year - 2021
Publication title -
journal of vacuum science and technology. a. vacuum, surfaces, and films
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/6.0000706
Subject(s) - trimethylgallium , materials science , analytical chemistry (journal) , thin film , chemical vapor deposition , gallium nitride , gallium , atomic layer deposition , ellipsometry , crystallite , plasma , remote plasma , trimethylindium , crystallization , substrate (aquarium) , metalorganic vapour phase epitaxy , layer (electronics) , epitaxy , chemistry , optoelectronics , nanotechnology , physics , organic chemistry , chromatography , quantum mechanics , metallurgy , oceanography , geology