Open AccessStructural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure
Author(s) -
Prudhvi Peri,
Kai Fu,
Houqiang Fu,
Yuji Zhao,
David J. Smith
Publication year - 2020
Publication title -
journal of vacuum science and technology. a. vacuum, surfaces, and films
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/6.0000488
Subject(s) - materials science , diode , optoelectronics , impact crater , reliability (semiconductor) , power semiconductor device , threading (protein sequence) , composite material , power (physics) , chemistry , biochemistry , physics , quantum mechanics , astronomy , protein structure