Detecting nanoscale contamination in semiconductor fabrication using through-focus scanning optical microscopy | Zendy

Min-Ho Rim | Zendy; Emil Agócs | Zendy; Ronald G. Dixson | Zendy; P. P. Kavuri | Zendy; András Vladár | Zendy; Ravikiran Attota | Zendy

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Detecting nanoscale contamination in semiconductor fabrication using through-focus scanning optical microscopy

Author(s) -

Min-Ho Rim,

Emil Agócs,

Ronald G. Dixson,

P. P. Kavuri,

András Vladár,

Ravikiran Attota

Publication year - 2020

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/6.0000352

Subject(s) - nanoscopic scale , materials science , scanning electron microscope , nanotechnology , scanning ion conductance microscopy , scanning probe microscopy , vibrational analysis with scanning probe microscopy , scanning capacitance microscopy , microscopy , fabrication , scanning confocal electron microscopy , focus (optics) , optical microscope , semiconductor , optics , optoelectronics , composite material , medicine , physics , alternative medicine , pathology

This paper reports high-throughput, light-based, through-focus scanning optical microscopy (TSOM) for detecting industrially relevant sub-50 nm tall nanoscale contaminants. Measurement parameter optimization to maximize the TSOM signal using optical simulations made it possible to detect the nanoscale contaminants. Atomic force and scanning electron microscopies were used as reference methods for comparison.

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