Controlled removal of hydrogen atoms from H-terminated silicon surfaces | Zendy

Hamed Alemansour | Zendy; S. O. Reza Moheimani | Zendy; James H. G. Owen | Zendy; John N. Randall | Zendy; Ehud Fuchs | Zendy

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Controlled removal of hydrogen atoms from H-terminated silicon surfaces

Author(s) -

Hamed Alemansour,

S. O. Reza Moheimani,

James H. G. Owen,

John N. Randall,

Ehud Fuchs

Publication year - 2020

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/6.0000241

Subject(s) - silicon , materials science , dangling bond , scanning tunneling microscope , fabrication , biasing , hydrogen , optoelectronics , desorption , nanotechnology , lithography , electrochemical scanning tunneling microscope , hydrogen silsesquioxane , voltage , electron beam lithography , scanning tunneling spectroscopy , adsorption , resist , chemistry , electrical engineering , medicine , alternative medicine , organic chemistry , pathology , engineering , layer (electronics)

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