Open AccessAnalysis of useful ion yield for Si in GaN by secondary ion mass spectrometry
Author(s) -
M. K. I. Senevirathna,
M. W. Ver,
G. A. Cooke,
Brendan Cross,
Alexander Kozhanov,
M. D. Williams
Publication year - 2020
Publication title -
journal of vacuum science and technology. b, nanotechnology and microelectronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/6.0000138
Subject(s) - mass spectrometry , secondary ion mass spectrometry , ion , ion source , ion beam , analytical chemistry (journal) , yield (engineering) , ion beam deposition , static secondary ion mass spectrometry , chemistry , ionization , thermal ionization mass spectrometry , quadrupole mass analyzer , dopant , atomic physics , materials science , optoelectronics , doping , physics , organic chemistry , chromatography , metallurgy