Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry | Zendy

M. K. I. Senevirathna | Zendy; M. W. Ver | Zendy; G. A. Cooke | Zendy; Garnett Cross | Zendy; Alexander Kozhanov | Zendy; M. D. Williams | Zendy

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Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry

Author(s) -

M. K. I. Senevirathna,

M. W. Ver,

G. A. Cooke,

Garnett Cross,

Alexander Kozhanov,

M. D. Williams

Publication year - 2020

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/6.0000138

Subject(s) - mass spectrometry , secondary ion mass spectrometry , ion source , ion , materials science , ion beam , analytical chemistry (journal) , static secondary ion mass spectrometry , ion beam deposition , yield (engineering) , ionization , thermal ionization mass spectrometry , quadrupole mass analyzer , dopant , atomic physics , chemistry , optoelectronics , doping , physics , organic chemistry , chromatography , metallurgy

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